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  • ESAD83-004R, Elektronika - specyfikacje elementów, Mostki i diody podwójne

    [ Pobierz całość w formacie PDF ]
    ESAD83-004R
    FUJI Diode
    Schottky Barrier Diode
    Maximum Rating and Characteristics
    Maximum ratings (at Ta=25˚C unless otherwise speciied.)
    Item
    Symbols
    Conditions
    Ratings
    Units
    Repetitive peak surge reverse voltage
    V
    RSM
    tw=500ns, duty=1/40
    48
    V
    -
    Repetitive peak reverse voltage
    V
    RRM
    40
    V
    50Hz Square wave duty =1/2
    Tc = 118˚C
    Average output current
    Io
    30 *
    A
    Non-repetitive forward surge current**
    I
    FSM
    Sine wave, 10ms 1shot
    150
    A
    -
    Operating junction temperature
    Tj
    150
    ˚C
    Storage temperature
    Tstg
    -
    -40 to +150
    ˚C
    Note* Out put current of center tap full wave connection.
    Note** Rating per element
    Electrical characteristics (at Ta=25˚C unless otherwise speciied.)
    Item
    Symbols
    Conditions
    Maximum
    Units
    Forward voltage***
    V
    F
    I
    F
    = 12.5 A
    0.55
    V
    Reverse current***
    I
    R
    V
    R
    =V
    RRM
    20
    mA
    Thermal resistance
    Rth(j-c)
    Junction to case
    1.2
    ˚C/W
    Note*** Rating per element
    Mechanical characteristics
    Item
    Conditions
    Maximum
    Units
    Mounting torque
    Recommended torque
    0.4 to 0.6
    N•m
    Approximate mass
    -
    5.5
    g
    1
     ESAD83-004R
    FUJI Diode
    Outline Drawings [mm]
    2
     ESAD83-004R
    FUJI Diode
    Forward Characteristic
    (typ.)
    Reverse Characteristic
    (typ.)
    100
    Tj=150°C
    10
    2
    Tj=125°C
    Tj=100°C
    10
    10
    1
    Tj=150°C
    Tj=125°C
    Tj=100°C
    Tj=25°C
    10
    0
    1
    Tj= 25°C
    10
    -1
    10
    -2
    0.1
    0
    10
    20
    30
    40
    50
    0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
    VR Reverse Voltage (V)
    VF Forward Voltage (V)
    Forward Power Dissipation
    (max.)
    Reverse Power Dissipation
    (max.)
    22
    26
    360°
    360°
    24
    20
    DC
    VR
    22
    I
    0
    18
    λ
    α
    20
    16
    18
    14
    16
    Square wave
    λ
    =60°
    12
    14
    Square wave λ=120°
    α
    =180°
    Sine wave λ=180°
    12
    10
    Square wave
    λ
    =180°
    10
    DC
    8
    8
    6
    6
    4
    4
    2
    2
    Per 1element
    0
    0
    0
    5
    10
    15
    20
    25
    30
    35
    40
    45
    0
    2
    4
    6
    8
    10
    12
    14
    16
    Io Average Output Current (A)
    VR Reverse Voltage (V)
    3
     ESAD83-004R
    FUJI Diode
    Current Derating (Io-Tc)
    (max.)
    Junction Capacitance Characteristic
    (typ.)
    160
    10000
    150
    140
    DC
    130
    120
    Sine wave λ=180°
    Square wave λ=180°
    1000
    110
    Square wave λ=120°
    100
    360°
    90
    Square wave λ=60°
    I
    0
    80
    λ
    VR=20V
    70
    100
    0
    5
    10
    15
    20
    25
    30
    35
    40
    45
    10
    100
    Io Average Output Current (A)
    λ:Conduction angle of forward current for each rectifier element
    Io:Output current of center-tap full wave connection
    VR Reverse Voltage (V)
    Surge Capability
    (max.)
    1000
    100
    10
    1
    1
    0
    100
    Number of Cycles at 50Hz
    4
     ESAD83-004R
    FUJI Diode
    Transient Thermal Impedance
    (max.)
    10
    1
    Rth j-c:1.2°C/W
    10
    0
    10
    -1
    10
    -2
    10
    -3
    10
    -2
    10
    -1
    10
    0
    10
    1
    10
    2
    t Time (sec)
    5
      [ Pobierz całość w formacie PDF ]
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